Disorder-Induced Magnetoresistance in a Two-Dimensional Electron System

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We predict and demonstrate that a disorder-induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality point. Effective medium calculations show that for charged impurity disorder, the low-field MR is a universal function of the ratio of carrier density to fluctuations in carrier density, a power law when this ratio is large, in excellent agreement with experiment. The MR is generic and should occur in other materials with large carrier density inhomogeneity.
Publisher
AMER PHYSICAL SOC
Issue Date
2014-07
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW LETTERS, v.113, no.4

ISSN
0031-9007
DOI
10.1103/PhysRevLett.113.047206
URI
http://hdl.handle.net/10203/195222
Appears in Collection
PH-Journal Papers(저널논문)
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