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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer

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dc.contributor.authorKim, KSko
dc.contributor.authorHa, KHko
dc.contributor.authorHan, IYko
dc.contributor.authorYang, Mko
dc.contributor.authorLee, Yong-Heeko
dc.date.accessioned2010-09-10T05:32:07Z-
dc.date.available2010-09-10T05:32:07Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-02-
dc.identifier.citationELECTRONICS LETTERS, v.36, no.3, pp.246 - 247-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/19437-
dc.description.abstractUsing burial wet-oxidised AlxOy layers to enhance impurity free vacancy diffusion. the intermixing of GaAs/AlGaAs quantum wells has been achieved A 70 Angstrom thick GaAs quantum well shows a blueshift of 59meV when the sample is annealed at 950 degrees C for 120s. By cathodeluminescence measurements. it is confirmed that the bandgap transition region is localised laterally within 1 mu m of the oxide/nonoxide interface.-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.subjectDIFFUSION-
dc.titleGaAs/AlGaAs quantum well intermixing using buried Al-oxide layer-
dc.typeArticle-
dc.identifier.wosid000085671400035-
dc.identifier.scopusid2-s2.0-0034598677-
dc.type.rimsART-
dc.citation.volume36-
dc.citation.issue3-
dc.citation.beginningpage246-
dc.citation.endingpage247-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorKim, KS-
dc.contributor.nonIdAuthorHa, KH-
dc.contributor.nonIdAuthorHan, IY-
dc.contributor.nonIdAuthorYang, M-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDIFFUSION-
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