Three-dimensionally kinked high-conducting CoGe nanowire growth induced by rotational twinning

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We have synthesized single-crystalline horizontal and free-standing monoclinic CoGe nanowire (NW) arrays on high-k dielectric Y-stabilized ZrO2 (110) substrates via a chemical vapor transport process without using any catalysts. Horizontal NWs are grown epitaxially on the substrate. Three-dimensionally (3D)-kinked NWs are grown from the tip of the horizontal NWs homoepitaxially initiated by rotational twinning. Electrical measurements show that both horizontal and 3D-kinked CoGe NWs have low resistivity. The 3D-kinked NWs as well as free-standing metallic CoGe NWs integrated on Y-stabilized ZrO2 substrates could find applications as effective on-chip interconnects and nanoelectrodes for highly integrated nanoelectronic devices and as platforms for fuel cells and as efficient catalysts.
Publisher
ROYAL SOC CHEMISTRY
Issue Date
2013-10
Language
English
Article Type
Article
Keywords

MAGNETIC-PROPERTIES; FIELD-EMISSION; ARRAYS; GERMANIUM; PHOTODETECTORS; NANOSTRUCTURES; DIAMETER; SILICON

Citation

JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.39, pp.6259 - 6264

ISSN
2050-7526
DOI
10.1039/c3tc31214c
URI
http://hdl.handle.net/10203/191272
Appears in Collection
CH-Journal Papers(저널논문)
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