DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seong, Young Hoon | ko |
dc.contributor.author | Kim, Do Kyung | ko |
dc.date.accessioned | 2014-11-12T08:57:23Z | - |
dc.date.available | 2014-11-12T08:57:23Z | - |
dc.date.created | 2014-10-06 | - |
dc.date.created | 2014-10-06 | - |
dc.date.created | 2014-10-06 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v.40, no.9, pp.15303 - 15311 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | http://hdl.handle.net/10203/191078 | - |
dc.description.abstract | The oxidation behavior of zirconium boride composites with various SiC contents (0-40 vol%) at 1500 degrees C in air (pO(2)= 10(4) Pa) and under low pO(2) (10(-8) Pa) was investigated. Due to different oxidation kinetics calculated from the oxidation depths, the oxidized composites exhibited different layered structures. In addition, the composites of ZrB2-30 vol% SiC (one of the typical compositions) oxidized at 1500 degrees C for 10 h in air and under low pO(2) conditions were analyzed using TEM (transmission electron microscope). In air, the oxidation depth as a function of time indicated a parabolic kinetic behavior, and the ZrB2-40 vol% SiC composite exhibited the lowest parabolic rate constant (k(P)) of 232 mu m(2)/h. Under low pO(2), the oxidation depth as a function of time indicated a parabolic to linear transition kinetic behavior, except for monolithic ZrB2. The monolithic ZrB2 exhibited the lowest parabolic rate constant (k(P)) of 811 mu m (2)/h. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | HIGH-TEMPERATURE CERAMICS | - |
dc.subject | DIBORIDE-SILICON CARBIDE | - |
dc.subject | ZRB2-SIC COMPOSITES | - |
dc.subject | ZIRCONIUM | - |
dc.subject | 1500-DEGREES-C | - |
dc.subject | AIR | - |
dc.title | Oxidation behavior of ZrB2-xSiC composites at 1500 degrees C under different oxygen partial pressures | - |
dc.type | Article | - |
dc.identifier.wosid | 000341343300093 | - |
dc.identifier.scopusid | 2-s2.0-84905908437 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 15303 | - |
dc.citation.endingpage | 15311 | - |
dc.citation.publicationname | CERAMICS INTERNATIONAL | - |
dc.identifier.doi | 10.1016/j.ceramint.2014.07.036 | - |
dc.contributor.localauthor | Kim, Do Kyung | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ZrB2-SiC | - |
dc.subject.keywordAuthor | Oxidation behavior | - |
dc.subject.keywordAuthor | Oxygen partial pressure | - |
dc.subject.keywordAuthor | Oxidation rate constant | - |
dc.subject.keywordAuthor | ZrB2-SiC | - |
dc.subject.keywordAuthor | Oxidation behavior | - |
dc.subject.keywordAuthor | Oxygen partial pressure | - |
dc.subject.keywordAuthor | Oxidation rate constant | - |
dc.subject.keywordPlus | HIGH-TEMPERATURE CERAMICS | - |
dc.subject.keywordPlus | DIBORIDE-SILICON CARBIDE | - |
dc.subject.keywordPlus | ZRB2-SIC COMPOSITES | - |
dc.subject.keywordPlus | ZIRCONIUM | - |
dc.subject.keywordPlus | 1500-DEGREES-C | - |
dc.subject.keywordPlus | AIR | - |
dc.subject.keywordPlus | HIGH-TEMPERATURE CERAMICS | - |
dc.subject.keywordPlus | DIBORIDE-SILICON CARBIDE | - |
dc.subject.keywordPlus | ZRB2-SIC COMPOSITES | - |
dc.subject.keywordPlus | ZIRCONIUM | - |
dc.subject.keywordPlus | 1500-DEGREES-C | - |
dc.subject.keywordPlus | AIR | - |
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