Wide Band Gap Characteristic of Quaternary and Flexible Mg and Ga Co-Doped ZnO Transparent Conductive Thin Films

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Transparent conductive and flexible Mg and Ga co-doped ZnO (MGZO) thin films were prepared on poly-ethylene terephthalate (PET) by RF magnetron sputtering technique at room temperature. The effects of different working pressures on the structural, chemical, morphological, optical and electrical properties of MGZO thin films were investigated. X-ray diffraction results indicate that all the MGZO thin films were grown as polycrystalline wurtzite structures without secondary phases such as MgO, Ga2O3, MgGa2O4, or ZnGa2O4. The MGZO thin film prepared at 6 mTorr has the lowest value of full width at half maximum. A typical survey spectrum of all the MGZO thin films confirmed the presence of Mg, Ga, Zn and O. The MGZO thin film prepared at 6 mTorr showed the widest optical band gap energy of 3.91 eV and lowest electrical resistivity of 5.3 × 10−3 Ω cm.
Publisher
ELSEVIER
Issue Date
2013-09
Language
English
Citation

Journal of Asian Ceramic Societies, v.1, no.3, pp.262 - 266

ISSN
2187-0764
DOI
10.1016/j.jascer.2013.06.003
URI
http://hdl.handle.net/10203/189497
Appears in Collection
MS-Journal Papers(저널논문)
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