Transition metal oxide window layer in thin film amorphous silicon solar cells

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Pin-type hydrogenated amorphous silicon solar cells have been fabricated by replacing state of the art silicon based window layer with more transparent transition metal oxide (TMO) materials. Three kinds of TMOs: vanadium oxide, tungsten oxide, and molybdenum oxide (MoOx) were comparatively investigated to reveal the design principles of metal oxide window layers. It was found that MoOx exhibited the best performance due to its higher work function property compared to other materials. In addition, the band alignment between MoOx and amorphous Si controls the series resistance, which was verified through compositional variation of MoOx thin films. The design principles of TMO window layer in amorphous Si solar cells are summarized as follows: A wide optical bandgap larger than 3.0 eV, a high work function larger than 5.2 eV, and a band alignment condition rendering efficient hole collection from amorphous Si absorber layer.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2014-04
Language
English
Article Type
Article
Keywords

ELECTRICAL-PROPERTIES; MOLYBDENUM OXIDE

Citation

THIN SOLID FILMS, v.556, pp.515 - 519

ISSN
0040-6090
DOI
10.1016/j.tsf.2014.01.037
URI
http://hdl.handle.net/10203/188871
Appears in Collection
EE-Journal Papers(저널논문)
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