ArF laser lithography 용 위상 변위 막을 위한 Transition metal (Hf, Zr) oxide, oxynitride 박막의 전자 상태 및 광학 특성 분석 = The electronic structures and optical properties of transition metal (Hf, Zr) oxide and oxynitride thin films as phase shift mask for ArF laser lithography

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Advisors
노광수researcherNo, Kwang-Soo
Description
한국과학기술원 : 신소재공학과,
Publisher
한국과학기술원
Issue Date
2006
Identifier
487896/325007  / 020035041
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2006.8, [ xiii, 155 p. ]

Keywords

전자 상태; 위상 변위 마스크; 광학 특성; HfO2; phase shift mask; electronic structures; optical properties; HfO2; Hf-O-N; Hf-O-N

URI
http://hdl.handle.net/10203/181934
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=487896&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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