(A) study on the micro-structural properties of N-incorporated ZnO thin films for FBAR devices = 박막 벌크 음향 공진기 소자를 위한 질소 원자가 주입된 산화 아연 박막의 미세 구조 특성 연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 331
  • Download : 0
Zinc Oxide (ZnO) is the II-VI group compound semiconductor composed of abundant elements, and has many interesting properties, thereby leading to various and large-scale applications of ZnO in the aspects of the mechanical, electrical, optical devices and so on. Especially, the FBAR (Film Bulk Acoustic Resonator) devices based on the piezoelectric characteristics of the ZnO have attracted a great attention as a promising novel filter technology mainly because it may be fully integrated with the conventional complementary metal oxide semiconductor/radio frequency integrated circuit (CMOS/RFIC) fabrication technologies, eventually allowing for the realization of a single-chip radio or a transceiver in the future. In order to achieve a good FBAR performance by reducing the insertion loss of the devices, it is essential to make the high quality piezoelectric film which has perfect c-axis texture, extremely smooth surface, sharp interface, and high electrical resistivity. On the other hand, intrinsic ZnO has been observed to be natively n-type with the compensated electron concentrations reduced to less than $10^{14} cm^{-3}$ on bulk samples grown hydrothermally. Thus, the compensatory doping of the ZnO films is required to obtain the high resistivity piezoelectric thin films, hence leading to the performance improvement of FBAR devices. In this research, the compensatory nitrogen [N] doping into the ZnO films by an RF magnetron sputtering system using $N_2O$ gas as a doping source was attempted in an effort to achieve a good return loss ($S_{11}$) characteristics of the FBAR device. Interestingly, it was observed that the nitrogen doping could cause the micro-structural change of the ZnO films. From this standpoint, a micro-structural analysis was done for more precise control of the N-incorporated ZnO films, thereby contributing to the improvement of devices. In this thesis, the micro-structural effects of the N-incorporation into the ZnO films were inspected ...
Advisors
Yoon, Gi-Wanresearcher윤기완researcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
2011
Identifier
467909/325007  / 020084290
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 2011.2, [ vii, 58 p. ]

Keywords

Film bulk acoustic resonator (FBAR); N-incorporated ZnO thin films; 박막 벌크 음향 공진기; 질소 주입 산화 아연 박막; 마그네트론 스퍼터링; RF magnetron sputtering

URI
http://hdl.handle.net/10203/180782
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=467909&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0