A study on the analysis of single event upset of shift register for space applications우주용 Shift Register의 Single Event Upset 분석에 관한 연구

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In this paper, an analytic method of radiation effect of the shift register composed of the latch for space applications is presented. The electronic devices in satellites can be affected by the charged particles which have protons, electrons, α particles, heavy ions, and neutral particles in space. This radiation particle leads to change the node voltage level, leakage current and functional failure. The conventional Master-Slave latch and the proposed Master-Slave latch are analyzed for single event effect(SEE) on 45MeV proton. The analytic method of SEE consists of device simulation, modeling the single event effect in circuit-level, circuit simulation in the SEE environment, and irradiation test. The device simulation was performed to verify charge collection in the device due to the SEE. The collected charges in electric field formed the drift current that can be thought the impulse current. In order to simulate the circuit operation in the SEE, By using this simulation result, the SEE model for circuit-level simulation was built and applied to the circuit simulation. The SEU cross section prediction for the designed latch circuits was conducted by using the various calculation models. The sensitive areas of the latch circuit were the drain regions of MOSFETs. From the circuit simulation with the SEE model, It enabled to predict how the single event upset(SEU) occurred in the latch circuit. The output voltage change varies with the type of MOSFET at which the SEE model was attached. The conventional latch circuit was easy to occur single event upset due to feedback loop composed of two inverter. In contrast, the SEU was not found in the proposed latch circuit. The designed shift register was fabricated with a 0.35-μm CMOS process. With a 45MeV cyclotron accelerator in Korea Institute of Radiological & Medical Sciences (KIRAMS), proton irradiation test was conducted for the designed latch circuit. The incident proton energy to the target latch was 43MeV a...
Advisors
Lee, Hee-Chulresearcher이희철
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
2013
Identifier
513239/325007  / 020113001
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 2013.2, [ vi, 54 p. ]

Keywords

radiation effect; The Master-Slave Latch Circuit; Single Event Effect; space radiation environment; Master-Slave 래치; 방사선 영향; 방사선 환경; Single Event Effect; Single Event Upset; Total Ionizing Dose; Total Ionizing Dose(TID)

URI
http://hdl.handle.net/10203/180610
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=513239&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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