Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Yang, GM

Showing results 1 to 25 of 25

1
Characteristics of InGaN/GaN light-emitting diode with Si delta-doped GaN contact layer

Jeon, SR; Jo, MS; Humg, TV; Yang, GM; Cho, HK; Lee, JeongYong; Hwang, SW; et al, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.188, no.1, pp.163 - 166, 2001-11

2
Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Yang, GM, APPLIED PHYSICS LETTERS, v.80, no.8, pp.1370 - 1372, 2002-02

3
Codoping characteristics of Zn with Mg in GaN

Kim, KS; Han, MS; Yang, GM; Youn, CJ; Lee, HJ; Cho, HK; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125, 2000-08

4
Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.425 - 428, 2001-09

5
Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03

6
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; et al, APPLIED PHYSICS LETTERS, v.79, no.16, pp.2594 - 2596, 2001-10

7
Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, SOLID-STATE ELECTRONICS, v.45, no.12, pp.2023 - 2027, 2001-12

8
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; et al, 99 fall Material Research Society Symposium, v.5, 1999-12-01

9
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; et al, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.11 - 74, 2000-01

10
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07

11
Formation of misfit dislocations and stacking faults in high indium content InxGa1-xN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.165 - 169, 2001-12

12
Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, APPLIED PHYSICS LETTERS, v.79, no.23, pp.3788 - 3790, 2001-12

13
Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1166 - 1170, 2002-02

14
Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Song, JH; Yu, PW; Yang, GM; Kim, CS, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1104 - 1107, 2002-02

15
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM; Sharma, N; Humphreys, C, JOURNAL OF CRYSTAL GROWTH, v.231, no.4, pp.466 - 473, 2001-11

16
Nano-scale island (dot)-induced optical emission in InGaN quantum wells

Kim, KS; Lee, WH; Kim, CS; Yang, GM; Hong, CH; Suh, EK; Lim, KY; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.141 - 146, 2001-07

17
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12

18
Response to "Comment on Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells " [Appl. Phys. Lett. 81, 3100 (2002)]

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; et al, APPLIED PHYSICS LETTERS, v.81, no.16, pp.3102 - 3103, 2002-10

19
Structural and optical characteristics of InGaN/GaN multiple quantum wells with different growth interruption

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, J; Yang, GM; Kim, CS, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.165 - 168, 2001-11

20
Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10

21
Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.667 - 672, 2001-12

22
Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density

Cho, HK; Lee, JeongYong; Choi, SC; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109, 2001-01

23
Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07

24
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells

Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07

25
Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structures during metalorganic chemical vapor deposition

Choi, SC; Song, YH; Jeon, SL; Jang, HJ; Yang, GM; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.4, pp.413 - 415, 2001-04

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