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A study on device characteristics of non-volatile memory with Ge doped Sb-Te phase change materials = Ge 첨가된 Sb-Te계 상변화 재료를 이용한 비휘발성 메모리 소자의 특성에 관한 연구link Zhe Wu; Wu, Zhe; et al, 한국과학기술원, 2011 |
Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe Wu, Zhe; Zhang, Gang; Park, Young-Wook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo-Seok; Jeong, Jeung-hyun; et al, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
Facile Preparation of PbTiO3 Nanodot Arrays: Combining Nanohybridization with Vapor Phase Reaction Sputtering Kim, Ji-Yoon; Hong, Jong-In; Park, Moon-Kyu; Wu, Zhe; Kim, Dong-Jin; Jang, Yu-Jin; Kim, Dong-Ha; et al, ADVANCED FUNCTIONAL MATERIALS, v.21, no.22, pp.4277 - 4284, 2011-11 |
Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature Wu, Zhe; Lee, Su-Youn; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo-Seok; Jeong, Jeung-hyun; No, Kwang-Soo; et al, APPLIED PHYSICS LETTERS, v.96, no.13, 2010-03 |
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