Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Rhee, HS

Showing results 1 to 10 of 10

1
Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate

Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.7, pp.2720 - 2724, 1999-07

2
Epitaxial growth and thermal stability of CoSi2 layer on (100) Si from Co-C films without capping layer

Ahn, Byung Tae; Rhee, HS; Sohn, DK, MRS Symposium Proceedings, pp.0, MRS, 1999-04-01

3
Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source

Rhee, HS; Jang, TW; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.7, pp.1003 - 1005, 1998-12

4
Formation of TiSi2 thin films from chemical vapor deposition using TiI4

Rhee, HS; Jang, TW; Ahn, Byung Tae; Baek, JT, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.121 - 124, 1998-11

5
Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt-carbon films on (100) Si substrate

Rhee, HS; Ahn, Byung Tae; Sohn, DK, JOURNAL OF APPLIED PHYSICS, v.86, no.6, pp.3452 - 3459, 1999-09

6
Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition on Si tips and its field-emission properties

Han, BW; Rhee, HS; Ahn, Byung Tae, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.19, no.2, pp.533 - 536, 2001

7
Hydrogen plasma effect on aluminum thin films deposition from CVD using dimethylethylamine Alane

Jang, TW; Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.125 - 128, 1998-11

8
Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Jang, TW; Rhee, HS; Ahn, Byung Tae, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.17, no.3, pp.1031 - 1035, 1999

9
Improved morphological stability of CoSi2 layer by in situ growth on polycrystalline silicon using reactive chemical vapor deposition

Lee, HS; Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.16 - 20, 2002-01

10
In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Rhee, HS; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.21, pp.3176 - 3178, 1999-05

rss_1.0 rss_2.0 atom_1.0