Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Park, Hyungjin

Showing results 1 to 7 of 7

1
Fabrication and characterization of solution-processed Indium oxide based thin film and nanowire transistors = 용액 공정 산화 인듐 기반의 박막 및 나노선 트랜지스터 제작 및 특성link

Park, Hyungjin; 박형진; et al, 한국과학기술원, 2016

2
Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution-Processed Field Effect Transistors

Park, Hyungjin; Yoon, Ki Ro; Kim, Sung Kyu; Kim, Il-Doo; Jin, Jungho; Kim, Yun Hyeok; Bae, Byeong-Soo, ADVANCED ELECTRONIC MATERIALS, v.2, no.11, 2016-11

3
Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo, AIP ADVANCES, v.6, no.3, 2016-03

4
Improvement of bias stability of oxyanion-incorporated aqueous sol-gel processed indium zinc oxide TFTs

Park, Hyungjin; Nam, YunYong; Jin, Jungho; Bae, Byeong-Soo, JOURNAL OF MATERIALS CHEMISTRY C, v.2, no.30, pp.5998 - 6003, 2014-08

5
Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

Park, Hyungjin; Nam, Yunyong; Jin, Jungho; Bae, Byeong-Soo, RSC ADVANCES, v.5, no.124, pp.102362 - 102366, 2015

6
Structure Engineering with ZrO2 Thin Film for Highly Conducting Electrospun In2O3 Nanowire Field Effect Transistor

Park, Hyungjin; Lee, In Jun; Kim, Yun Hyeok; Bae, Byeong-Soo, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, Society for Information Display, 2016-12

7
The Effect of Metal Composition on Bias Stability of Solution Processed Indium Oxide Based Thin Film Transistors

Hwang, Young Hwan; Im, Hyeon-Gyun; Park, Hyungjin; Nam, Yun-Yong; Bae, Byeong-Soo, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.2, no.11, pp.Q200 - Q204, 2013

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