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Showing results 1 to 4 of 4

1
Analysis of a transient region during the initial stage of atomic layer deposition

Lim, Jung-Wook; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6327 - 6331, 2000-09

2
Metal–organic atomic-layer deposition of titanium–silicon–nitride films

Min, Jae-Sik; Park, Hyung-Sang; Kang, Sang-Won, APPLIED PHYSICS LETTERS 99 75(11) 1521-1523, 1999-07-19

3
The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Min, Jae-Sik; Park, Jin-Seong; Park, Hyung-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.10, pp.3868 - 3872, 2000-06

4
Theoretical evaluation of film growth rate during atomic layer epitaxy

Park, Hyung-Sang; Min, Jae-Sik; Lim, Jung-Wook; Kang, Sang-Won, APPLIED SURFACE SCIENCE, v.158, no.1-2, pp.81 - 91, 1999-12

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