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Showing results 1 to 6 of 6

1
Formation of CoSi2/Si(111) by in situ Solid Phase Epitaxy in UHV

C.K. Choi; M.S. Kang; K.H. Kim; J.J. Lee; H.S. Kim; J.D. Lee; Lee, JeongYong; et al, 응용물리, v.9, no.6, pp.728 - 734, 1996-12

2
RBS Measurements of GexSi1-x/Si(100) Crystals Grown by Solid Phase Epitaxy by Using an a-Ge/Au/Si(100) Structure

H.S. Kim; J.J. Lee; K.H. Kim; T.G. Im; C.K. Choi; J.Y. Lee, 응용물리, v.10, no.3, pp.252 - 257, 1997-12

3
Structural Properties of GexSi1-x Films Grown on Si(111) Substrate by Using Solid Phase Epitaxy

H.S. Kim; B.Y. Ahn; J.J. Lee; K.H. Kim; C.K. Choi; J.Y. Lee, 한국응용물리학회지, v.11, no.4, pp.413 - 418, 1998-05

4
Structural Properties of GexSi1-x/Si(100) Grown by Solid Phase Epitaxy

H.S. Kim; J.J. Lee; K.H. Kim; T.K. Im; C.S. Yoo; C.K. Choi; Lee, JeongYong, 응용물리, v.9, no.1, pp.79 - 84, 1996-12

5
The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers

H.S. Kim; J.J. Lee; S.Y. jeong; Lee, JeongYong; J.Y. Lin; H.X. Jiang, KOREAN JOURNAL OF MATERIALS RESEARCH, v.12, no.3, pp.190 - 194, 2002

6
The Structural Properties of Epitaxial GaN Films Growth on LaAlO3(100) Substrates

J.J. Lee; K.Y. Kang; Y.S. Park; C.S. Yang; H.S. Kim; K.H. Kim; T.W. Kang; et al, 응용물리, v.12, no.3, pp.202 - 206, 1999-12

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