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1
A new low-resistance antifuse with planar metal/dielectric/poly-Si/dielectric/metal structure

Baek, JT; Chung, SH; Kang, SW; Ahn, Byung Tae; Yoo, Hyung Joun, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.3B, pp.1642 - 1645, 1997-03

2
Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source

Jang, TW; Moon, W; Baek, JT; Ahn, Byung Tae, THIN SOLID FILMS, v.333, no.1-2, pp.137 - 141, 1998-11

3
Effects of deposition parameters on composition, structure, resistivity and step coverage of TiN thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Kim, JS; Lee, EJ; Baek, JT; Lee, Won-Jong, THIN SOLID FILMS, v.305, no.1-2 , pp.103 - 109, 1997-04

4
Formation of TiSi2 thin films from chemical vapor deposition using TiI4

Rhee, HS; Jang, TW; Ahn, Byung Tae; Baek, JT, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.121 - 124, 1998-11

5
Interfacial reaction between aluminum metal and boron-doped polysilicon in a planar type antifuse device

Baek, JT; Park, HH; Ahn, Byung Tae; Jun, CH; Kim, YT; Song, YH; Kim, J, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.5A, pp.2451 - 2454, 1998-05

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