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Grain boundary incorporation of interstitial oxygen in polycrystalline Si film by plasma oxidation and its effect on thin film transistors Kim, BH; Lee, SR; Ahn, KM; Ahn, Byung Tae, ELECTRONIC MATERIALS LETTERS, v.4, no.2, pp.45 - 49, 2008-06 |
Low-temperature growth of N-doped SiO2 layer using inductively-coupled plasma oxidation and its effect on the characteristics of thin film transistors Kim, BH; Lee, SR; Ahn, KM; Kang, SM; Yang, YH; Ahn, BT, 한국재료학회지, v.19, no.1, pp.37 - 43, 2009 |
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