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Showing results 1 to 7 of 7

1
(An) advanced statistical model for the lifetime prediction due to electromigration failure and an improved fast method for the reliability evaluation in metal lines = Electromigration으로 단선되는 금속배선의 수명을 예측하기 위한 진보된 통계적 모델링과 신뢰성 측정 방법 개선에 관한 연구link

Park, Jong-Ho; 박종호; et al, 한국과학기술원, 2003

2
Co-sputter deposited Ta-Si diffusion barrier between Si and Cu: the effects of Si content on the barrier property

Lee, YJ; Suh, BS; Park, Chong-Ook, THIN SOLID FILMS, v.357, no.2, pp.237 - 241, 1999-12

3
Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source

Jang, TW; Moon, W; Baek, JT; Ahn, Byung Tae, THIN SOLID FILMS, v.333, no.1-2, pp.137 - 141, 1998-11

4
Factors Determining the Resistive Switching Behavior of Transparent InGaZnO-Based Memristors

Qin, Fei; Zhang, Yuxuan; Park, Honghwi; Kim, Chung Soo; Lee, Dong Hun; Jiang, Zhong-Tao; Park, Jeongmin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.7, 2022-07

5
Metallization of Targeted Protein Assemblies in Cell-Derived Extracellular Matrix by Antibody-Guided Biotemplating

Song, Chang Woo; Ahn, Jaewan; Yong, Insung; Kim, Nakhyun; Park, Chan E.; Kim, Sein; Chung, Sung-Yoon; et al, ADVANCED SCIENCE, v.10, no.35, 2023-12

6
Properties of reactively sputtered WNx as Cu diffusion barrier

Suh, BS; Lee, YJ; Hwang, JS; Park, Chong-Ook, THIN SOLID FILMS, v.348, no.1-2, pp.299 - 303, 1999-07

7
Room-temperature growth of Cu thin films by nozzle-type partially ionized beam deposition with various acceleration voltages

Koh, SK; Yoon, YS; Kim, KH; Jung, HJ; Lee, JeongYong, THIN SOLID FILMS, v.278, no.1-2, pp.45 - 48, 1996-05

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