Improvement of On-Off-Current Ratio in TiOx Active-Channel TFTs Using N2O Plasma Treatment

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Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N2O plasma treatment to improve the on-off-current ratio, in n-type titanium oxide (TiOx) active-channel thin-film transistors. While the high-power (275 W) N2O plasma treatment oxidizes the whole TiOx channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2009-04
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.30, pp.362 - 364

ISSN
0741-3106
DOI
10.1109/LED.2009.2013647
URI
http://hdl.handle.net/10203/176591
Appears in Collection
EE-Journal Papers(저널논문)
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