DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Remskar, Maja | ko |
dc.contributor.author | Yan, Rusen | ko |
dc.contributor.author | Kosel, Tom | ko |
dc.contributor.author | Park, Jong Kyung | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Haensch, Wilfried | ko |
dc.contributor.author | Xing, Huili (Grace) | ko |
dc.contributor.author | Seabaugh, Alan | ko |
dc.contributor.author | Jena, Debdeep | ko |
dc.date.accessioned | 2013-08-08T05:46:03Z | - |
dc.date.available | 2013-08-08T05:46:03Z | - |
dc.date.created | 2013-03-19 | - |
dc.date.created | 2013-03-19 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.102, no.4 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174601 | - |
dc.description.abstract | We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789975] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ATOMIC LAYERS | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | GRAPHENE | - |
dc.subject | GROWTH | - |
dc.title | Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000314723600084 | - |
dc.identifier.scopusid | 2-s2.0-84873594478 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.issue | 4 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4789975 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.contributor.nonIdAuthor | Remskar, Maja | - |
dc.contributor.nonIdAuthor | Yan, Rusen | - |
dc.contributor.nonIdAuthor | Kosel, Tom | - |
dc.contributor.nonIdAuthor | Park, Jong Kyung | - |
dc.contributor.nonIdAuthor | Haensch, Wilfried | - |
dc.contributor.nonIdAuthor | Xing, Huili (Grace) | - |
dc.contributor.nonIdAuthor | Seabaugh, Alan | - |
dc.contributor.nonIdAuthor | Jena, Debdeep | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | GROWTH | - |
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