Electron beam damage in the SiN membrane of an X-ray lithography mask

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dc.contributor.authorChoi, Sang-Sooko
dc.contributor.authorKim, Jong Sooko
dc.contributor.authorChung, Hai Binko
dc.contributor.authorYoo, Hyung Jounko
dc.contributor.authorKim, Bo-Wooko
dc.date.accessioned2013-08-08T04:08:37Z-
dc.date.available2013-08-08T04:08:37Z-
dc.date.created2013-07-31-
dc.date.created2013-07-31-
dc.date.issued1998-01-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.1, pp.360 - 363-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/174269-
dc.description.abstractThe damage caused as a result of exposure to an electron beam of 20 to 50 kV acceleration voltage on the SiN membrane of an X-ray mask has been investigated. It determined that the optical and the mechanical properties of this material are modified and may potentially limit its use as a membrane in an X-ray mask structure for high density memory devices of giga bit dynamic random access memory (DRAM) level. In particular, after exposure to the electron beam of a 50 kV acceleration voltage and a dosage of 900 mu C/cm(2), the optical transmission of the SiN membrane fell by about 17% in the wavelength of 633 nm and the change of the out of plane distortion(OPD) on the 16 x 16 mm(2) membrane was observed. The difference in the mechanical deflection before and after exposure to the electron beam of 20kV to 50kV acceleration voltage on the membrane area of 800 x 800 mu m(2) was about 500 Angstrom to 200 Angstrom which was measured by the alpha-step (Tencor 200) with the stylus force of 19.6 dyn.-
dc.languageEnglish-
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectRADIATION-DAMAGE-
dc.titleElectron beam damage in the SiN membrane of an X-ray lithography mask-
dc.typeArticle-
dc.identifier.wosid000071972400076-
dc.identifier.scopusid2-s2.0-0031700567-
dc.type.rimsART-
dc.citation.volume37-
dc.citation.issue1-
dc.citation.beginningpage360-
dc.citation.endingpage363-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS-
dc.identifier.doi10.1143/JJAP.37.360-
dc.contributor.localauthorYoo, Hyung Joun-
dc.contributor.nonIdAuthorChoi, Sang-Soo-
dc.contributor.nonIdAuthorKim, Jong Soo-
dc.contributor.nonIdAuthorChung, Hai Bin-
dc.contributor.nonIdAuthorKim, Bo-Woo-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorelectron beam-
dc.subject.keywordAuthorX-ray mask-
dc.subject.keywordAuthorSiN membrane-
dc.subject.keywordAuthortransmission-
dc.subject.keywordAuthordamage-
dc.subject.keywordAuthorscattering-
dc.subject.keywordAuthoracceleration voltage-
dc.subject.keywordPlusRADIATION-DAMAGE-
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