DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Duarte, Juan Pablo | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-06-07T07:57:11Z | - |
dc.date.available | 2013-06-07T07:57:11Z | - |
dc.date.created | 2013-05-07 | - |
dc.date.created | 2013-05-07 | - |
dc.date.issued | 2013-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.4, pp.1355 - 1360 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/173788 | - |
dc.description.abstract | A silicon nanowire (Si-NW) with a gate-all-around (GAA) structure is implemented on a bulk wafer for a junctionless (JL) field-effect transistor (FET). A suspended Si-NW from the bulk-Si is realized using a deep reactive ion etching (RIE) process. The RIE process is iteratively applied to make multiply stacked Si-NWs, which can increase the on-state current when amplified with the number of iterations or enable integration of 3-D stacked Flash memory. The fabricated JL FETs exhibit excellent electrostatic control with the aid of the GAA and junction-free structure. The influence on device characteristics according to the channel dimensions and additional doping at the source and drain extension are studied for various geometric structures of the Si-NW. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FABRICATION | - |
dc.subject | DEVICES | - |
dc.title | Investigation of Silicon Nanowire Gate-All-Around Junctionless Transistors Built on a Bulk Substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000316821800010 | - |
dc.identifier.scopusid | 2-s2.0-84875509168 | - |
dc.type.rims | ART | - |
dc.citation.volume | 60 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1355 | - |
dc.citation.endingpage | 1360 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2013.2247763 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Moon, Dong-Il | - |
dc.contributor.nonIdAuthor | Duarte, Juan Pablo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Bosch process | - |
dc.subject.keywordAuthor | bulk MOSFET | - |
dc.subject.keywordAuthor | corner effect | - |
dc.subject.keywordAuthor | deep reactive ion etching (RIE) | - |
dc.subject.keywordAuthor | extension doping | - |
dc.subject.keywordAuthor | gate-all-around (GAA) | - |
dc.subject.keywordAuthor | junctionless (JL) transistor | - |
dc.subject.keywordAuthor | short-channel effects (SCEs) | - |
dc.subject.keywordAuthor | vertically stacked silicon nanowire (Si-NW) | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DEVICES | - |
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