The fabrication technique and electrical properties of a free-standing GaN nanowire

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We fabricated a free-standing structure of a GaN nanowire by selectively etching Si3N4, previously grown on a SiO2 substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current-voltage (I-V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes.
Publisher
SPRINGER
Issue Date
2005-07
Language
English
Article Type
Article
Citation

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.81, no.2, pp.245 - 247

ISSN
0947-8396
DOI
10.1007/s00339-005-3276-3
URI
http://hdl.handle.net/10203/173745
Appears in Collection
EE-Journal Papers(저널논문)
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