Fabrication of nano-gap electrode pairs using atomic-layer-deposited sacrificial layer and shadow deposition

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We propose a new fabrication process of nano-gap electrode pairs using an atomic-layer-deposited (ALD) sacrificial layer and the shadow deposition technique. In this process, gap width can be precisely controlled by the number of deposition cycles of the ALD process, whereas junction area is defined by the deposition angle of the second electrode material through an overhanging shadow mask on top of the first electrode. In comparison with our previous method, process reliability has been highly improved because the unintentional deposition of the second electrode material on the sidewall of the first electrode is completely prevented. We have fabricated 10 x 10 arrays of n-type polycrystalline silicon (n-poly-Si)/Au nano-gap electrode pairs with gap widths of 6 and 9 nm, which show good insulating properties at room temperature.
Publisher
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Issue Date
2006-05
Language
English
Article Type
Article
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, pp.4293 - 4295

ISSN
0021-4922
DOI
10.1143/JJAP.45.4293
URI
http://hdl.handle.net/10203/173741
Appears in Collection
EE-Journal Papers(저널논문)
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