(invited) Fabrication and characterization of high efficiency InGaN quantum well structures formed on nano- and micro-scale patterned templates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Yong-Hoon | - |
| dc.date.accessioned | 2013-03-29T14:56:33Z | - |
| dc.date.available | 2013-03-29T14:56:33Z | - |
| dc.date.created | 2012-08-13 | - |
| dc.date.issued | 2010-08-22 | - |
| dc.identifier.citation | International Union of Materials Research Societies–International Conference on Electronic Materials 2010 (IUMRS-ICEM 2010), v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/171545 | - |
| dc.language | ENG | - |
| dc.publisher | International Union of Materials Research Societies–International Conference on Electronic Materials 2010 (IUMRS-ICEM 2010) | - |
| dc.title | (invited) Fabrication and characterization of high efficiency InGaN quantum well structures formed on nano- and micro-scale patterned templates | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Union of Materials Research Societies–International Conference on Electronic Materials 2010 (IUMRS-ICEM 2010) | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Cho, Yong-Hoon | - |
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