Ultralow dielectric constant Psicoh films prepared with allyitrimethyisllane as skeleton precursor

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 239
  • Download : 0
Ultralow dielectric constant pSiCOH films have been prepared using allyltrimethylsilane(ATMS) as the skeleton precursor and a porogen precursor. The porogen has been removed from the deposited films by thermal annealing at 420 °C, obtaining films with dielectric constants down to 2.2. The films have been investigated by Fourier transform infrared spectroscopy, and n&k optical measurements of the refractive index (n) and the electrical characteristics have been measured on metal-insulator-semiconductor structures. It was found that the properties of the annealed films depend on the deposition temperature and concentration of porogen.
Publisher
대한화학회
Issue Date
2011-04-28
Language
KOR
Citation

대한화학회 제107회 총회 및 학술발표회

URI
http://hdl.handle.net/10203/171135
Appears in Collection
CBE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0