The fabrication of 3-dimensional complex patterns with 10nm scale by secondary sputtering phenomenon

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dc.contributor.author전환진-
dc.contributor.author정현수-
dc.contributor.author김종선-
dc.contributor.author정희태-
dc.date.accessioned2013-03-29T13:28:25Z-
dc.date.available2013-03-29T13:28:25Z-
dc.date.created2012-07-06-
dc.date.issued2012-04-
dc.identifier.citation2012 춘계학술대회 한국고분자학회, v.37, no.1, pp. --
dc.identifier.urihttp://hdl.handle.net/10203/171027-
dc.description.abstractHere, we demonstrate a novel patterning technology enabling to fabricate the high resolution of complex nanoscale patterns with simple process. The idea arises from the angular distribution of target particles by ion-beam bombardment, which use the ultra-thin nano structure in consistent with side shape of polymer patterns by attaching target materials to the polymer surfaces during accelerated ion-assisted bombardment. Also we have developed an highly advanced nanopatterning technique by adopting secondary sputtering lithography repetitively in order to achieve the very complex 3-dimeansional patterns and connected 10nm scale patterns. We were able to fabricated the grid pattern with high resolution(10nm scale) and high aspect ratio(-20) and connected ring structures like five ringed Olympic flag over large area( 7mm x 7mm).-
dc.languageKOR-
dc.publisher한국고분자학회-
dc.titleThe fabrication of 3-dimensional complex patterns with 10nm scale by secondary sputtering phenomenon-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.volume37-
dc.citation.issue1-
dc.citation.publicationname2012 춘계학술대회 한국고분자학회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor정희태-
dc.contributor.nonIdAuthor전환진-
dc.contributor.nonIdAuthor정현수-
dc.contributor.nonIdAuthor김종선-
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CBE-Conference Papers(학술회의논문)
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