A Study of Dual-Bit Nonvolatile Memory Characteristics by the Channel-Hot-Electron (CHEI) Program Mechanism for Double-Gate FinFET SONOS Cells

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Issue Date
2008
Language
KOR
Citation

제 15회 반도체 학술대회, pp.409 - 410

URI
http://hdl.handle.net/10203/160216
Appears in Collection
EE-Conference Papers(학술회의논문)
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