Design and Fabrication of a Novel Inner Field-plate AlGaN/GaN-HEMT Structure for High Power Applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, | - |
| dc.contributor.author | Lee, S | - |
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.date.accessioned | 2013-03-27T06:42:32Z | - |
| dc.date.available | 2013-03-27T06:42:32Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2007 | - |
| dc.identifier.citation | MINT-MIS, v., no., pp.205 - 208 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/160057 | - |
| dc.language | ENG | - |
| dc.title | Design and Fabrication of a Novel Inner Field-plate AlGaN/GaN-HEMT Structure for High Power Applications | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 205 | - |
| dc.citation.endingpage | 208 | - |
| dc.citation.publicationname | MINT-MIS | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Lee, | - |
| dc.contributor.nonIdAuthor | Lee, S | - |
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