A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yang-Kyu | - |
| dc.contributor.author | Choi, Sungjin | - |
| dc.contributor.author | Han, Jin-Woo | - |
| dc.contributor.author | Ryu, Seong-Wan | - |
| dc.contributor.author | Kim, Sungho | - |
| dc.date.accessioned | 2013-03-27T06:26:23Z | - |
| dc.date.available | 2013-03-27T06:26:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008-02 | - |
| dc.identifier.citation | The 15th Korean Conference on Semiconductors (KCS), v., no., pp.617 - 618 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/159957 | - |
| dc.language | KOR | - |
| dc.title | A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 617 | - |
| dc.citation.endingpage | 618 | - |
| dc.citation.publicationname | The 15th Korean Conference on Semiconductors (KCS) | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Choi, Sungjin | - |
| dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
| dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
| dc.contributor.nonIdAuthor | Kim, Sungho | - |
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