DSpace at KOASAS: Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm T

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm TDemonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm T

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Cho, Byung Jin researcher / Suthram, S / Majhi, P / Sun, G / Kalra, P / Harris, R / Choi, KJ

Issue Date: 2007-12-01

Language: ENG

Citation: International Electron Device Meeting (IEDM) 2007, pp.0 - 0

URI: http://hdl.handle.net/10203/158268

Appears in Collection: EE-Conference Papers(학술회의논문)

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Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm TDemonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm T

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