DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, J. | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.date.accessioned | 2013-03-26T23:16:20Z | - |
dc.date.available | 2013-03-26T23:16:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-10-15 | - |
dc.identifier.citation | 34th International Symposium on Compound Semiconductors, ISCS-2007, v., no., pp.3035 - 3037 | - |
dc.identifier.issn | 1862-6351 | - |
dc.identifier.uri | http://hdl.handle.net/10203/157026 | - |
dc.language | ENG | - |
dc.title | The electronic structure of Ga-vacancy in Mn-doped GaN | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-77951291218 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 3035 | - |
dc.citation.endingpage | 3037 | - |
dc.citation.publicationname | 34th International Symposium on Compound Semiconductors, ISCS-2007 | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Kang, J. | - |
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