K- and Q-bands CMOS frequency sources with X-band quadrature VCO

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dc.contributor.authorKo, Sko
dc.contributor.authorKim, JGko
dc.contributor.authorSong, Tko
dc.contributor.authorYoon, Eko
dc.contributor.authorHong, Songcheolko
dc.date.accessioned2007-09-27T06:04:48Z-
dc.date.available2007-09-27T06:04:48Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-09-
dc.identifier.citationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.53, no.9, pp.2789 - 2800-
dc.identifier.issn0018-9480-
dc.identifier.urihttp://hdl.handle.net/10203/1561-
dc.description.abstractFully integrated 10-, 20-, and 40-GHz frequency sources are presented, which are implemented with a 0.18-mu m CMOS process. A 10-GHz quadrature voltage-controlled oscillator (QVCO) is designed to have output with a low de level, which can be effectively followed by a frequency multiplier. The proposed multipliers generate signals of 20 and 40 GHz using the harmonics of the QVCO. To have more harmonic power, a frequency doubler with pinchoff clipping is used without any buffers or dc-level shifters. The QVCO has a low phase noise of - 118.67 dBc/Hz at a 1-MHz offset frequency with a 1.8-V power supply. The transistor size effect on phase noise is investigated. The frequency doubler has a low phase noise of -111.67 dBc/Hz at a 1-MHz offset frequency is measured, which is 7 dB higher than a phase noise of the QVCO. The doubler can be tuned between 19.8-22 GHz and the output is -6.83 dBm. A fourth-order frequency multiplier, which is used to obtain 40-GHz outputs, shows a phase noise of -102.0 dBc/Hz at 1-MHz offset frequency with the output power of - 18.0 dBm. A large tuning range of 39.3-43.67 GHz (10%) is observed.-
dc.description.sponsorshipThe authors wish to acknowledge Samsung Electronics Company for providing the opportunity to fabricate the chip.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectNOISE-
dc.titleK- and Q-bands CMOS frequency sources with X-band quadrature VCO-
dc.typeArticle-
dc.identifier.wosid000231721300019-
dc.identifier.scopusid2-s2.0-27744532389-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue9-
dc.citation.beginningpage2789-
dc.citation.endingpage2800-
dc.citation.publicationnameIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorKo, S-
dc.contributor.nonIdAuthorKim, JG-
dc.contributor.nonIdAuthorSong, T-
dc.contributor.nonIdAuthorYoon, E-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorfourth multiplier-
dc.subject.keywordAuthorfrequency doubler-
dc.subject.keywordAuthorpinchoff clipping-
dc.subject.keywordAuthorquadrature-
dc.subject.keywordAuthorsecond multiplier-
dc.subject.keywordAuthortransformer-
dc.subject.keywordAuthorvoltage-controlled oscillator (VCO)-
dc.subject.keywordPlusNOISE-
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