DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hyung-Cheol Shin | - |
dc.date.accessioned | 2013-03-18T14:13:46Z | - |
dc.date.available | 2013-03-18T14:13:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003 | - |
dc.identifier.citation | SISPAD 2003, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/149148 | - |
dc.language | ENG | - |
dc.title | Accurate Four-Terminal RF MOSFET Model Accounting for the Short-Channel Effect in the Source-to-Drain Capacitance | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | SISPAD 2003 | - |
dc.contributor.localauthor | Hyung-Cheol Shin | - |
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