DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, NY | ko |
dc.contributor.author | LEE, KJ | ko |
dc.contributor.author | LEE, C | ko |
dc.contributor.author | KIM, JE | ko |
dc.contributor.author | PARK, HY | ko |
dc.contributor.author | KWAK, DH | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.contributor.author | LIM, H | ko |
dc.date.accessioned | 2009-12-14T09:12:15Z | - |
dc.date.available | 2009-12-14T09:12:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-09 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.78, no.5, pp.3367 - 3370 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/14863 | - |
dc.description.abstract | A line-shape analysis of room temperature photoluminescence (PL) spectra was carried out on Si-doped GaAs samples grown by molecular beam epitaxy. The electron concentration n of the samples ranges from 1.0 X 10(17) to 4.2 X 10(18) cm(-3). It was found that the conduction band tail eta(c) and the Fermi energy epsilon(f) measured from the conduction band minimum can be expressed as eta(c) = 2.0 X 10(-8)n(1/3)(eV) and epsilon(f) = -0.074 + 1.03 X 10(-7)n(1/3)(eV), respectively. The PL peak energy, at which the electron concentration per unit energy in the conduction band is maximum, can also be expressed as 1.426 + 2.4 X 10(-14)n(2/3)(eV). (C) 1995 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | N-TYPE | - |
dc.subject | LUMINESCENCE | - |
dc.title | DETERMINATION OF CONDUCTION-BAND TAIL AND FERMI ENERGY OF HEAVILY SI-DOPED GAAS BY ROOM-TEMPERATURE PHOTOLUMINESCENCE | - |
dc.type | Article | - |
dc.identifier.wosid | A1995RR84500073 | - |
dc.identifier.scopusid | 2-s2.0-0029379112 | - |
dc.type.rims | ART | - |
dc.citation.volume | 78 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 3367 | - |
dc.citation.endingpage | 3370 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | LEE, NY | - |
dc.contributor.nonIdAuthor | LEE, KJ | - |
dc.contributor.nonIdAuthor | LEE, C | - |
dc.contributor.nonIdAuthor | KIM, JE | - |
dc.contributor.nonIdAuthor | PARK, HY | - |
dc.contributor.nonIdAuthor | KWAK, DH | - |
dc.contributor.nonIdAuthor | LIM, H | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | N-TYPE | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
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