Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface

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Calculated chemical equations using thermodynamics suggest that elemental Te-0 is easily induced during bromine-based etching process on the HgCdTe surface and the induced elemental Te-0 can be removed by chemical reaction with hydrazine, forming volatile H2Te. X-ray photoelectron spectroscopy (XPS) confirmed these chemical reactions. The induced elemental Te-0 is believed to play a role as surface generation-recombination centers in CdTe/HgCdTe interface, which was confirmed by XPS, ideality factor, and energy-dispersive interface trap density (D-it) analyses.
Publisher
AMER INST PHYSICS
Issue Date
2006-05
Language
English
Article Type
Article
Keywords

DIODE IDEALITY FACTOR; P-N-JUNCTIONS; HGCDTE; ZNS; PHOTODIODES; CDTE

Citation

APPLIED PHYSICS LETTERS, v.88, pp.103 - 109

ISSN
0003-6951
DOI
10.1063/1.2203940
URI
http://hdl.handle.net/10203/14855
Appears in Collection
EE-Journal Papers(저널논문)
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