Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface
Calculated chemical equations using thermodynamics suggest that elemental Te-0 is easily induced during bromine-based etching process on the HgCdTe surface and the induced elemental Te-0 can be removed by chemical reaction with hydrazine, forming volatile H2Te. X-ray photoelectron spectroscopy (XPS) confirmed these chemical reactions. The induced elemental Te-0 is believed to play a role as surface generation-recombination centers in CdTe/HgCdTe interface, which was confirmed by XPS, ideality factor, and energy-dispersive interface trap density (D-it) analyses.
- Publisher
- AMER INST PHYSICS
- Issue Date
- 2006-05
- Language
- English
- Article Type
- Article
- Keywords
DIODE IDEALITY FACTOR; P-N-JUNCTIONS; HGCDTE; ZNS; PHOTODIODES; CDTE
- Citation
APPLIED PHYSICS LETTERS, v.88, pp.103 - 109
- ISSN
- 0003-6951
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 12 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.