DC Field | Value | Language |
---|---|---|
dc.contributor.author | Koh, K | ko |
dc.contributor.author | Park, HM | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2007-09-18T06:52:55Z | - |
dc.date.available | 2007-09-18T06:52:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.50, no.11, pp.2598 - 2603 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1468 | - |
dc.description.abstract | A spline large-signal FET model is presented. This includes a quiescent bias dependency to predict nonlinear dynamic behavior of FETs in which self-heating and trap effects are present. The intrinsic device of the model represented by a parallel connection of current and charge sources and the model parameters are extracted from bias-dependent pulsed I-Vs and S-parameters, respectively. The validity of the model is demonstrated by comparing the simulated small-signal S-parameters over a wide bias range with measured data. Nonlinear behaviors of FETs such as P-in - P-out, third-order intermodulation distortion, and efficiency are also compared. | - |
dc.description.sponsorship | This work was supported by the Korean Office of Science and Engineering Foundation supported Millimeter-Wave Innovation Technology Research Center. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | EQUIVALENT-CIRCUIT | - |
dc.title | A spline large-signal FET model based on bias-dependent pulsed I-V measurement | - |
dc.type | Article | - |
dc.identifier.wosid | 000178986000025 | - |
dc.identifier.scopusid | 2-s2.0-0036852182 | - |
dc.type.rims | ART | - |
dc.citation.volume | 50 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 2598 | - |
dc.citation.endingpage | 2603 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Koh, K | - |
dc.contributor.nonIdAuthor | Park, HM | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | GaAs MESFET | - |
dc.subject.keywordAuthor | large-signal model | - |
dc.subject.keywordAuthor | nonquasi-static model | - |
dc.subject.keywordAuthor | pulsed I-V | - |
dc.subject.keywordAuthor | self-heating effects | - |
dc.subject.keywordAuthor | spline | - |
dc.subject.keywordAuthor | table-based model | - |
dc.subject.keywordAuthor | trap effects | - |
dc.subject.keywordPlus | EQUIVALENT-CIRCUIT | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.