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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETsFully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs

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Cho, Byung Jinresearcher / Huang, CH / Yu, DS / Chin, A / Chen, WJ / Zhu, C / Li, MF
Issue Date
2003-12-08
Language
ENG
Citation

International Electron Device Meeting (IEDM), pp.0 - 0

URI
http://hdl.handle.net/10203/146667
Appears in Collection
EE-Conference Papers(학술회의논문)
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