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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETsFully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorHuang, CH-
dc.contributor.authorYu, DS-
dc.contributor.authorChin, A-
dc.contributor.authorChen, WJ-
dc.contributor.authorZhu, C-
dc.contributor.authorLi, MF-
dc.date.accessioned2013-03-18T08:48:58Z-
dc.date.available2013-03-18T08:48:58Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-08-
dc.identifier.citationInternational Electron Device Meeting (IEDM), v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/146667-
dc.languageENG-
dc.titleFully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs-
dc.title.alternativeFully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameInternational Electron Device Meeting (IEDM)-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorHuang, CH-
dc.contributor.nonIdAuthorYu, DS-
dc.contributor.nonIdAuthorChin, A-
dc.contributor.nonIdAuthorChen, WJ-
dc.contributor.nonIdAuthorZhu, C-
dc.contributor.nonIdAuthorLi, MF-
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EE-Conference Papers(학술회의논문)
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