ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices applicationALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorYu, HY-
dc.contributor.authorWu, N-
dc.contributor.authorYeo, C-
dc.contributor.authorJoo, MS-
dc.contributor.authorLi, MF-
dc.contributor.authorZhu, C-
dc.date.accessioned2013-03-18T05:22:14Z-
dc.date.available2013-03-18T05:22:14Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-11-
dc.identifier.citation2nd International Conference on Materials for Advanced Technologies, v., no., pp.562 - 562-
dc.identifier.urihttp://hdl.handle.net/10203/145113-
dc.languageENG-
dc.titleALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application-
dc.title.alternativeALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage562-
dc.citation.endingpage562-
dc.citation.publicationname2nd International Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorYu, HY-
dc.contributor.nonIdAuthorWu, N-
dc.contributor.nonIdAuthorYeo, C-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorZhu, C-
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EE-Conference Papers(학술회의논문)
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