DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Yu, HY | - |
dc.contributor.author | Wu, N | - |
dc.contributor.author | Yeo, C | - |
dc.contributor.author | Joo, MS | - |
dc.contributor.author | Li, MF | - |
dc.contributor.author | Zhu, C | - |
dc.date.accessioned | 2013-03-18T05:22:14Z | - |
dc.date.available | 2013-03-18T05:22:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-12-11 | - |
dc.identifier.citation | 2nd International Conference on Materials for Advanced Technologies, v., no., pp.562 - 562 | - |
dc.identifier.uri | http://hdl.handle.net/10203/145113 | - |
dc.language | ENG | - |
dc.title | ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application | - |
dc.title.alternative | ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 562 | - |
dc.citation.endingpage | 562 | - |
dc.citation.publicationname | 2nd International Conference on Materials for Advanced Technologies | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yu, HY | - |
dc.contributor.nonIdAuthor | Wu, N | - |
dc.contributor.nonIdAuthor | Yeo, C | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Zhu, C | - |
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