Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature ProcessBehavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

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Issue Date
2004-09-14
Language
ENG
Citation

Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0

URI
http://hdl.handle.net/10203/144969
Appears in Collection
EE-Conference Papers(학술회의논문)
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