DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, J. | - |
dc.contributor.author | Kim, D.Y. | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.date.accessioned | 2013-03-17T02:06:49Z | - |
dc.date.available | 2013-03-17T02:06:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-07-24 | - |
dc.identifier.citation | 28th International Conference on the Physics of Semiconductors, ICPS 2006, v., no., pp.263 - 264 | - |
dc.identifier.uri | http://hdl.handle.net/10203/138666 | - |
dc.language | ENG | - |
dc.title | Effect of H and Si impurities on device performance based on HfO 2 gate oxide | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-77958514611 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 263 | - |
dc.citation.endingpage | 264 | - |
dc.citation.publicationname | 28th International Conference on the Physics of Semiconductors, ICPS 2006 | - |
dc.identifier.conferencecountry | Austria | - |
dc.identifier.conferencecountry | Austria | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Kang, J. | - |
dc.contributor.nonIdAuthor | Kim, D.Y. | - |
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