Ce doped bismuth titanate(BCT) thin films were prepared by liquid source misted chemical depositon. This report characterized BCT films as a function of annealing temperature and thickness by XRD, SEM, hysteresis, fatigue and leakage current density. XRD results showed BCT films were crystalized above 600oC and after annealed at 700oC in furnace and oxygen atmosphere electrical properties were optimized. Leakage current density of 130nm films were greatly improved as the film thickness increased as 180nm. 700oC annealed films of 180nm thickness showed good fatigue endurance until 10^10 cycles and low leakage current at 1V.