Integrity of gate oxides irradiated under electron-beam lithography conditionsIntegrity of gate oxides irradiated under electron-beam lithography conditions

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Issue Date
1999-09-08
Language
ENG
Citation

Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp.182 - 182

URI
http://hdl.handle.net/10203/130414
Appears in Collection
EE-Conference Papers(학술회의논문)
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