DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Ang, CH | - |
dc.contributor.author | Ling, CH | - |
dc.contributor.author | Cheng, ZY | - |
dc.date.accessioned | 2013-03-16T10:34:08Z | - |
dc.date.available | 2013-03-16T10:34:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-08-28 | - |
dc.identifier.citation | Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), v., no., pp.254 - 254 | - |
dc.identifier.uri | http://hdl.handle.net/10203/130410 | - |
dc.language | ENG | - |
dc.title | A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide | - |
dc.title.alternative | A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 254 | - |
dc.citation.endingpage | 254 | - |
dc.citation.publicationname | Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM) | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ang, CH | - |
dc.contributor.nonIdAuthor | Ling, CH | - |
dc.contributor.nonIdAuthor | Cheng, ZY | - |
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