Normal-incident In0.2Ga0.8As/GaAs quantum well infrared photodetector employing a p-i-n-i-p camel diode structure

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Issue Date
2001-06-25
Language
ENG
Citation

Device Research Conference (DRC), pp.157 - 158

URI
http://hdl.handle.net/10203/127687
Appears in Collection
EE-Conference Papers(학술회의논문)
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