Gate delay characteristics of sub 30 nm MOS with non-overlapped source-drain to gate
- Publisher
- 한국반도체학술대회
- Issue Date
- 2002-02
- Language
- Korean
- Citation
제9회 반도체학술대회
- Appears in Collection
- RIMS Conference PapersRIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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