DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, C. H. | - |
dc.contributor.author | Yang, Kyounghoon | - |
dc.contributor.author | Gonzalez, A. F. | - |
dc.contributor.author | East, J. R. | - |
dc.contributor.author | Mazumder, P. | - |
dc.contributor.author | Haddad, G. I. | - |
dc.date.accessioned | 2007-08-30T06:35:03Z | - |
dc.date.available | 2007-08-30T06:35:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-05-16 | - |
dc.identifier.citation | IEEE Int. Conf. on InP and Related Material, v., no., pp.419 - 422 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1169 | - |
dc.description.sponsorship | the U.S. Army Research Office under the URI program | en |
dc.language | ENG | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE | - |
dc.title | InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 419 | - |
dc.citation.endingpage | 422 | - |
dc.citation.publicationname | IEEE Int. Conf. on InP and Related Material | - |
dc.identifier.conferencecountry | Switzerland | - |
dc.identifier.conferencecountry | Switzerland | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.contributor.nonIdAuthor | Lin, C. H. | - |
dc.contributor.nonIdAuthor | Gonzalez, A. F. | - |
dc.contributor.nonIdAuthor | East, J. R. | - |
dc.contributor.nonIdAuthor | Mazumder, P. | - |
dc.contributor.nonIdAuthor | Haddad, G. I. | - |
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