DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Cho, NH | - |
dc.contributor.author | Huh, TH | - |
dc.contributor.author | Jang, YT | - |
dc.contributor.author | Ro, JS | - |
dc.contributor.author | Lee, KH | - |
dc.contributor.author | Kim, JC | - |
dc.date.accessioned | 2013-03-15T01:22:36Z | - |
dc.date.available | 2013-03-15T01:22:36Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-05-22 | - |
dc.identifier.citation | International Conf. on Ion Implantation Technology, v., no., pp.661 - 661 | - |
dc.identifier.uri | http://hdl.handle.net/10203/115398 | - |
dc.language | ENG | - |
dc.title | Annealing behavior of a double MeV implanted silicon | - |
dc.title.alternative | Annealing behavior of a double MeV implanted silicon | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 661 | - |
dc.citation.endingpage | 661 | - |
dc.citation.publicationname | International Conf. on Ion Implantation Technology | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Cho, NH | - |
dc.contributor.nonIdAuthor | Huh, TH | - |
dc.contributor.nonIdAuthor | Jang, YT | - |
dc.contributor.nonIdAuthor | Ro, JS | - |
dc.contributor.nonIdAuthor | Lee, KH | - |
dc.contributor.nonIdAuthor | Kim, JC | - |
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