DSpace at KOASAS: Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors

DSpace at KOASAS

College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors

Cited 0 time in webofscience

Cited 0 time in scopus

Hit : 340
Download : 0

Export

Sang-Won Kang researcher

Issue Date: 1992

Language: ENG

Citation: 1992 IEEE International SOI Conference Proceedings, pp.50 - 51

URI: http://hdl.handle.net/10203/113417

Appears in Collection: MS-Conference Papers(학술회의논문)

Files in This Item: There are no files associated with this item.

Display Full Item Record

qr_code

트윗하기

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

KOASAS

KOASAS

Browse

Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors

KOASAS

Communities & Collections